PART |
Description |
Maker |
MB84VD23381HJ-70PBS |
64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM 64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM
|
Spansion Inc. SPANSION LLC
|
MBM29DL161BE MBM29DL161BE-12 MBM29DL161BE-70 MBM29 |
16M (2MX8/1MX16) BIT DUAL OPERATION 16M (2M X 8/1M X 16) BIT Dual Operation
|
FUJITSU[Fujitsu Media Devices Limited]
|
HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168 16M x 64 Bit DRAM Module unbuffered 16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
|
SIEMENS AG Infineon Technologies AG
|
LH28F160BHE-TTL90 |
16M (x8/x16) Flash Memory
|
Sharp Corporation
|
K4X56163PG-FE K4X56163PG-FG |
16M x16 Mobile-DDR SDRAM
|
Samsung semiconductor
|
IS42S16800E-6BLI IS42S16800E-6TL IS42S81600E IS42S |
16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc
|
IS45S16800E-6BLA1 IS45S81600E-6TLA1 IS45S81600E-7C |
16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM
|
Integrated Silicon Solu... Integrated Silicon Solution, Inc
|
MBM29DL161BD MBM29DL161BE70PFTN MBM29DL161BE70PFTR |
16M (2M x 8/1M x 16) BIT Dual Operation
|
FUJITSU[Fujitsu Media Devices Limited]
|
MBM29DL161BD MBM29DL164BE70PFTR MBM29DL163BE70PFTR |
16M (2M x 8/1M x 16) BIT Dual Operation
|
Fujitsu Limited Fujitsu Component Limited.
|